Structural Analysis of Pure and Potash Alum Doped KDP Crystals Grown by Gel Medium

Authors

  • M.P. Rameela  Department of Physics Sarah Tucker College for Women, Tirunelveli
  • T.H. Freeda  Department of Physics S.T. Hindu College Nagercoil
  • T. Asaithambi  P.G and Research Department of Physics, Alagappa Govt. Arts College, Karaikudi

Keywords:

Gel growth, KDP, FTIR, XRD

Abstract

Optically good quality pure and metal doped KDP crystals have been grown by gel method at room temperature and their characterization have been studied. Gel method is a much uncomplicated method and can be utilized to synthesize crystals which are having low solubility. Potassium dihydrogen orthophosphate KH2PO4 (KDP) continues to be an interesting material both academically and industrially. KDP is a representative of hydrogen bonded materials which possess very good electro–optic and nonlinear optical properties in addition to interesting electrical properties. Due to this interesting properties, we made an attempt to grow pure and Potash Alum doped KDP crystals in various concentrations (0.002, 0.004, 0.006, 0.008 and 0.010) using gel method. The grown crystals were collected after 20 days. We get crystals with good quality and shaped. The electrical conductivity increases with increase of temperature crystals. The Structural properties were found out by using FTIR and XRD studies. Results were discussed in detail.

References

  1. Lefaucheux, F, Roberts, M C & Manghi, E, (1982) “A Comparison Between Gel Grown and Solution Grown Crystals — Case of ADP and KDP” J. Crystal Growth, Vol.56, No.1, pp 141-150.
  2. Brouwer, G, Rosmalen, G M V & Bennama, P, (1974) “The Growth of Single Crystals of Rb2PtCl6 and Similar Alkali Precious Metal Chlorides and of BaSO4 in an Ion-exchanged Sodium-free Silica Gel”, J. Crystal Growth, Vol. 23, No. 3, pp 228-232.
  3. Garcia Ruiz, J M & Amoros, J L, (1981) “Morphological Aspects of Some Symmetrical Crystal Aggregates Grown by Silica Gel technique”, J. Crystal Growth, Vol.55, No.2, pp 379-383.
  4. Boulin, D & Ellis, W C, (1970) “Gel-growth of Silver Acetate Crystals”, J. Crystal Growth, Vol.6, No.3, pp 290-292.
  5. Gits, S, F, Cheux, Le Au & Robert, M C, (1978) “Effect of Stirring on Crystalline Quality of Solution Grown Crystals — Case of Potash Alum”, J. Crystal Growth, Vol.44, No.3, pp 345-355.
  6. Armington, A F & O’Connor, J J, (1968) “Gel Growth of Cuprous Halide Crystals”, J. Crystal Growth, Vol.3, No.4, pp 367-371.
  7. Ramet X. Sun, X, Xu, Z. Gao, Y. Fu, S. Wahg,            H. Zong, Y. Li, J. Cryst. Growth 217 (2000) 404.
  8. N. Zaitseva, L. Carman, I. Smolsky, J. Cryst. Growth 241 (2002) 363.
  9. Bo Wang. Chang – Shui Fang. Sheng – Iai Wang, Xun Sun, Quing-tian Gu, Yi-ping Li, Xin-guang Xu, Jianqin Zhang, Bing Liu, with potassium carbonate as additives. J. Cryst. Growth 2008; 310: 5341-5346.
  10. N.Pattanaboonmee, P.Ramasamy, P.Manyumprocedia Engineering, 32 (2012), 1019-1025.
  11. Dongli Xu, Dongfeng Xue. J. Cryst. Growth 310 (2008) 1385.
  12. Dogli Xu, Dongfeng Xue, J. Alloys Compd. 449 (2008) 353.
  13. Dongli Xu, Dongfeng Xue. J. Cryst. Growth 310 (2008) 1385.
  14. S.Balamurugan, P.Ramasamy, Spectrochimica Acta part A 71 (2009) 1979-1983.
  15. P. Santhana Raghavan, P. Ramasamy, Recent Trends in Cryst Growth, Pinsa 68(2002)235
  16. Jingran Su, Youting Song, Daofan Zhang and Xinan Chang, Powder diffraction, 24, (2009) pp. 234.
  17. James R. Connolly, “Introduction to X-Ray Powder Diffraction”, Spring EPS400-002 (2007).

International Journal of Scientific Research in Science and Technology

Downloads

Published

2017-12-15

Issue

Volume 3, Issue 11, November-December-2017

Section

Research Articles

License

Copyright (c) IJSRST

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

[1]
M.P. Rameela, T.H. Freeda, T. Asaithambi, " Structural Analysis of Pure and Potash Alum Doped KDP Crystals Grown by Gel Medium, International Journal of Scientific Research in Science and Technology(IJSRST), Online ISSN : 2395-602X, Print ISSN : 2395-6011, Volume 3, Issue 11, pp.24-27, November-December-2017.