Non-Vacuum Based Preparation of Heterojunction Thin Film Layers for Photovoltaic Application

Authors

  • G. Genifer Silvena  Department of Physics, St. Joseph’s College (Autonomous), Tiruchirappalli - 620002, Tamilnadu, India
  • Bincy John  Department of Physics, St. Joseph’s College (Autonomous), Tiruchirappalli - 620002, Tamilnadu, India
  • A. Leo Rajesh  Department of Physics, St. Joseph’s College (Autonomous), Tiruchirappalli - 620002, Tamilnadu, India

Keywords:

Thin films, Cu2ZnSnS4, p-n junction, Photocurrent response.

Abstract

Earth abundant and non-toxic materials were chosen for the fabrication of thin film solar cell using simple and widely applicable deposition techniques. Cu2ZnSnS4 (CZTS) thin films was used as a p-type absorber layer in the device and TiO2 was used as the n-type layer. A p-n junction was formed with TiO2 and CZTS layers prepared by sol-gel spin coating and spray pyrolysis technique respectively. The device was constructed on a FTO substrate and Al was used as the back electrode with the device structure Glass/FTO/TiO2/CZTS/Al. The structural, optical and optoelectronic response of the device was studied using Glancing Incidence angle X-ray Diffraction (GIXRD), UV-Visible spectrum and I-V measurements. The GIXRD analysis revealed the polycrystalline nature of the material and the structural formation of each layer. The fabricated device was analyzed to study with photocurrent response. The device showed an open circuit voltage (Voc) of 647 mV and a short circuit current density (Jsc) of 4.5 nA/cm2 upon illumination. The UV-Visible measurement after depositing each layer shows the variation in transmittance after each layer deposition.

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International Journal of Scientific Research in Science and Technology

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Published

2017-12-15

Issue

Volume 3, Issue 11, November-December-2017

Section

Research Articles

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How to Cite

[1]
G. Genifer Silvena, Bincy John, A. Leo Rajesh, " Non-Vacuum Based Preparation of Heterojunction Thin Film Layers for Photovoltaic Application , International Journal of Scientific Research in Science and Technology(IJSRST), Online ISSN : 2395-602X, Print ISSN : 2395-6011, Volume 3, Issue 11, pp.264-267, November-December-2017.