The Electrical Studies on Sol-Gel Routed Molybdenum Oxide Thin Film

Authors

  • P. Adal Arasu  Department of Physics, St. Joseph’s College, Trichy, Tamil Nady, India
  • R. Victor Williams  Department of Physics, St. Joseph’s College, Trichy, Tamil Nady, India

Keywords:

Sol-gel, electrical conductivity, Dielectric constant, capacitance, tunability, Curie-temperature, Figure of merit.

Abstract

This paper investigates electrical properties of sol-gel routed spin coated Molybdenum trioxide (MoO3) thin films. Prepared films were annealed at 400 oC. The phase transformation from amorphous to α-orthorhombic phase with preferential orientation (0 2 2) has been found by XRD for the film annealed at 400 oC. The vibration modes of α-orthorhombic MoO3 have been examined by Raman spectrum. The predominant Raman’s band of α-orthorhombic MoO3 thin film has been found at the frequency range 1000–600 cm-1. Using UV-Vis spectrum the band gap of the film is found to be 3.3-3.8eV. The surface morphology of the MoO3 films has been examined by scanning electron microscope. The resistivity of the film found to be 1.4 x 10 7 Ωm. The AC conductivity measurement of MoO3 film has been carried out in the frequency range 10-106 Hz. The frequency dependence of the impedance has been plotted in the complex plane. The Variation of the capacitance and dielectric constant of MoO3 film with respect to temperature and frequency has been analyzed. Tunability of capacitance and figure of merit of the film are also determined.

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Published

2017-12-15

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Section

Research Articles

How to Cite

[1]
P. Adal Arasu, R. Victor Williams, " The Electrical Studies on Sol-Gel Routed Molybdenum Oxide Thin Film, International Journal of Scientific Research in Science and Technology(IJSRST), Online ISSN : 2395-602X, Print ISSN : 2395-6011, Volume 3, Issue 11, pp.278-286, November-December-2017.