Influence of Annealing Temperature on Optical and Electrical Properties of Cu2ZnSnS4 (CZTS) thin Films Deposited by Sputtering Method from a Single Quaternary Target

Authors

  • S. Abdullahi  Department of Physics Usmanu Danfodiyo University Sokoto, Nigeria
  • M. Momoh  Department of Physics Usmanu Danfodiyo University Sokoto, Nigeria
  • A.U. Moreh  Department of Physics Usmanu Danfodiyo University Sokoto, Nigeria
  • A. M. Bayawa  Department of Pure and Applied Chemistry Usmanu Danfodiyo University Sokoto, Nigeria
  • B. Hamza  Department of Physics Usmanu Danfodiyo University Sokoto, Nigeria
  • G.M. Argungu  Department of Physics Usmanu Danfodiyo University Sokoto, Nigeria
  • O. T. Popoola  Department of Mechanical Engineering Florida International University Miami, Florida, U.S.A

Keywords:

RF sputtering, Cu2ZnSnS4 thin Thin Film, Annealing, Resistance, Optoelectronics.

Abstract

Cu2ZnSnS4 thin films were fabricated by one-step RF magnetron sputtering of a single quaternary Cu2ZnSnS4 (CZTS) chalcogenide target on corning glass substrate, followed by annealing at 523, 623 and 723K under nitrogen atmosphere for 60 minutes. Optical transmittance and reflectance data of the films were utilized to compute the absorption coefficient, refractive index, extinction coefficient and optical band gap energy of the films. The nature of the optical transition has been direct allowed with average optical band gap energies ranging between 1.5 eV and 2.4 eV. The optical band gap energy has a tendency to increase with the increase in the annealing temperature. The resistance and sheet resistance of the films ranges from 4.1 -3Ω cm-14680 -3Ω cm and 0.02 3Ω-0.25 3Ω respectively.

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Published

2017-02-28

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Research Articles

How to Cite

[1]
S. Abdullahi, M. Momoh, A.U. Moreh, A. M. Bayawa, B. Hamza, G.M. Argungu, O. T. Popoola, " Influence of Annealing Temperature on Optical and Electrical Properties of Cu2ZnSnS4 (CZTS) thin Films Deposited by Sputtering Method from a Single Quaternary Target, International Journal of Scientific Research in Science and Technology(IJSRST), Online ISSN : 2395-602X, Print ISSN : 2395-6011, Volume 3, Issue 1, pp.77-82, January-February-2017.