Phonon Controlled Temperature Dependence of Electron Mobility in 2DEG of GaAs Surface Layer

Authors

  • A. K. Ghorai  Physics Department, Kalimpong College, Kalimpong, West Bengal, India

Keywords:

Semiconductor, 2DEG, Mobility, Phonon, Screening.

Abstract

The acoustic phonon limited zero-field mobility of free electrons is estimated in a degenerate two dimensional elec¬tron gas (2DEG) formed in semiconductor interface considering the effect of screening of the free carriers and the true phonon distribution which are indeed dominant characteristics of electron-phonon scattering at low lat¬tice temperatures. Numerical calculations are made to observe the effect of screening on mobility values in GaAs surface layer and the result obtained here is compared with available experimental data and other theoretical result.

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International Journal of Scientific Research in Science and Technology

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Published

2017-08-31

Issue

Volume 3, Issue 6, July-August-2017

Section

Research Articles

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How to Cite

[1]
A. K. Ghorai, " Phonon Controlled Temperature Dependence of Electron Mobility in 2DEG of GaAs Surface Layer, International Journal of Scientific Research in Science and Technology(IJSRST), Online ISSN : 2395-602X, Print ISSN : 2395-6011, Volume 3, Issue 6, pp.281-287, July-August-2017.