On Hot Electron Transport in Si(100) 2DEG at Low Lattice Temperature

Authors

  • A. K. Ghorai  Physics Department, Kalimpong College, Kalimpong,West Bengal, India

Keywords:

Semiconductor, Hot electron, 2DEG, Phonon, Relaxation time

Abstract

Electron temperature model is applied to calculate electron temperature and hot electron mobility at low lattice temperatures in semiconductor inversion layer where the electrons are quantized to form a two-dimensional electron gas (2DEG). The computation is carried out considering the interaction of electrons only with the deformation potential acoustic phonons and using the momentum relaxation time approximation. The derived expressions are used to find the electric field dependence of electron temperature and mobility characteristics in Si(100) 2DEG and the results thus obtained are compared with other theoretical results.

References

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International Journal of Scientific Research in Science and Technology

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Published

2017-10-31

Issue

Volume 3, Issue 7, September-October-2017

Section

Research Articles

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How to Cite

[1]
A. K. Ghorai, " On Hot Electron Transport in Si(100) 2DEG at Low Lattice Temperature , International Journal of Scientific Research in Science and Technology(IJSRST), Online ISSN : 2395-602X, Print ISSN : 2395-6011, Volume 3, Issue 7, pp.1005-1009, September-October-2017.