Effect of Nonparabolicity of Conduction Band on Temperature Dependent Electron Mobility in III-V Compounds

Authors(1) :-A. K. Ghorai

The effect of nonparabolicity of the conduction band on the zero-field mobility of free electrons in bulk semiconductor is calculated at low lattice temperatures using relaxation time approximation and taking into account some elastic scattering mechanisms. The mobility expressions are considered for the interaction of electrons with the ionized impurity atoms, the deformation potential acoustic phonons and the piezoelectric acoustic phonons both for parabolic and nonparabolic conduction band. The numerical computations are carried out in InSb, a III-V compound having high value of nonparabolicity factor and in GaAs, a III-V compound semiconductor with low value of nonparabolicity factor. Numerical calculation is done for ionized impurity concentrations of 1x10^13 cm^(-3) and 1x10^15 cm^(-3) in both the samples and it is observed that the nonparabolicity of the conduction band affects the electron mobility noticeably.

Authors and Affiliations

A. K. Ghorai
Physics Department, Kalimpong College, Kalimpong, West Bengal, India

Semiconductor, Electron, Scattering Rates, Phonon, Mobility.

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Publication Details

Published in : Volume 3 | Issue 7 | September-October 2017
Date of Publication : 2017-10-31
License:  This work is licensed under a Creative Commons Attribution 4.0 International License.
Page(s) : 408-413
Manuscript Number : IJSRST173768
Publisher : Technoscience Academy

Print ISSN : 2395-6011, Online ISSN : 2395-602X

Cite This Article :

A. K. Ghorai, " Effect of Nonparabolicity of Conduction Band on Temperature Dependent Electron Mobility in III-V Compounds , International Journal of Scientific Research in Science and Technology(IJSRST), Print ISSN : 2395-6011, Online ISSN : 2395-602X, Volume 3, Issue 7, pp.408-413, September-October-2017. Available at doi : 10.32628/IJSRST173768
Journal URL : http://ijsrst.com/IJSRST173768

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