Study of Pico-Second Time Domain Reflectometry Techniques using Microstripline Terminated in some Polar Liquids

Authors(2) :-B. R. Sharma, N. D. Chaudhari

A microstripline having 50 ohms characteristic impedance has been delineated on FR-4 board material, by using standard chemical photo-etching technology. The dielectric constant and dissipation factor for FR-4 substrate material is 4.6 and 0.018 at 1MHz respectively. The fringing fields arising from terminal end of a microstripline have been employed to observe liquid responses. The microstripline has been vertically terminated into various polar liquids at different successive lengths. The response waveforms due to 40 ps rise time pulse from microstripline in a liquid are observed on the TDR unit in reflection mode at room temperature. The response waveform obtained is similar to the conventional co-axial transmission line connected to precision SMA cell containing liquid. The data analysis is carried out by standard Fourier transformation techniques. The microstripline terminated into a liquid can be used to estimate the dielectric properties of various liquids in broadband frequency region up to 10 GHz.

Authors and Affiliations

B. R. Sharma
Department of Physics, Pratishthan Mahavidyalaya Paithan, Aurangabad, Maharashtra, India
N. D. Chaudhari
Department of Physics, Pratishthan Mahavidyalaya Paithan, Aurangabad, Maharashtra, India

TDR, Electric permittivity, Relaxation Time, Dielectric Dispersion.

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Publication Details

Published in : Volume 3 | Issue 8 | November-December 2017
Date of Publication : 2017-12-31
License:  This work is licensed under a Creative Commons Attribution 4.0 International License.
Page(s) : 161-166
Manuscript Number : IJSRST173835
Publisher : Technoscience Academy

Print ISSN : 2395-6011, Online ISSN : 2395-602X

Cite This Article :

B. R. Sharma, N. D. Chaudhari , " Study of Pico-Second Time Domain Reflectometry Techniques using Microstripline Terminated in some Polar Liquids", International Journal of Scientific Research in Science and Technology(IJSRST), Print ISSN : 2395-6011, Online ISSN : 2395-602X, Volume 3, Issue 8, pp.161-166, November-December-2017.
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