Effect of Al Dopants on the Optical and Dispersion Parameters of Iron Oxide thin Films
Keywords:
Dispersion parameters, spray pyrolysis, iron oxide, Fe2O3:Al.Abstract
Uniform and adherent Fe2O3:Al thin films were deposited on glass substrate using spray pyrolysis technique. The optical properties and dispersion parameters of iron oxide thin films have been studied as a function of doping concentration with Aluminum (Al). It has to be mentioned that changed in direct optical energy band gap of iron oxide was recorded, as expected, after doping. The data show that the optical energy gap Eg decreased from 2.52 eV for the undoped Fe2O3 to 2.46 eV with the increasing of doping concentration of Al to 5%. Therefore, the changes in dispersion parameters and Urbach tails were investigated. An increase in the doping concentration causes a decrease in the average oscillator strength. The single-oscillator parameter has been reported.
References
- M. Cornell, U. Schwertmann, the Iron Oxides, second ed.,Wiley-VCH, p. 11, 2003.
- Kenichi, J. Akinide, T. Kiyohide, Japan Patents 61 (24) 147 (1986).
- Sanehiro, Y. Sejji, N. Toshiyuki, Japan Patents 62 (160) 651 (1981).
- Keiji, M. Itsuaki, Japan Patents, 79 (106) 78 (1979).
- Chen, L. Xu, W. Li, and X. Gou, Adv. Mater. 17, 582 (2005).
- Neri, A. Bonavita, S. Galvagno, C. Pace, S. Patane, and A. Arena, Sensors and Actuators B 73, 89 (2001).
- Cheol and C. Han, J. Phys. IV France 132, 185 (2006).
- Huo, Q. Li, H. Zhao, L. Yu, S. Gao, and J. Zhao,Sensors and Actuators B 107, 915 (2005).
- Luo, T. Yu, Y. Wang, Z. Li, J. Ye, and Z. Zou, J.Phys. D: Appl. Phys. 40, 1091 (2007).
- Kawahara, K. Yamada, and H. Tada, J. Colloid and Interface Sci. 294, 504 (2006).
- Tiwari, R. Prakash, R. Choudhary, and D. Phase, J.Phys. D: Appl. Phys. 40, 4943 (2007).
- Dghoughi, B. Elidrissi, C. Bernede, M. Addou, M. Alaoui, M. Regragui, and H. Erguig, Appl. Surf. Sci. 253, 1823 (2006).
- Glasscock, P. Barnes, I. Plumb, A. Bendavid, and P. Martin, Thin Solid Films 516, 1716 (2008).
- Gota, E. Guiot, M. Henriot, and M. Gautier, Phys.Rev. B 60, 141387 (1999).
- Urbach F., Phys. Rev. 92(5) (1953) 1324.
- Tauc, Amorphous and Liquid Semiconductors, Plenum Press, New York, 1974.
- Tauc, R. Grigorovici, A. Vancu, Phys. Status Solidi 15 (1966) 627-637.
- Wemple S. H., DiDomenico, J. Appl. Phys. 40 (2) (1969) 720-734.
- Wemple S. H., DiDomenico, Phys. Rev. B3 (1971) 1338-1351.
- Wemple S. H., Phys. Rev. B7 (1973) 3767-3777.
- Atyia H. E., Optoelectron. Adv. M., 8 (2006) 1359-1366.
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