Estimation of Band Gap Energy and Urbach Energy of  α-quaterthiophene ( α-4T) thin Films and their Effect on Film Thickness

Authors

  • V. Sasidharan  School of Technology and Applied Sciences, Mahatma Gandhi University, Pullarikunnu Campus, Malloosserry. P.O, Kottayam, Kerala, India
  • C.S. Menon  School of Pure and Applied Physics, Mahatma Gandhi University, Priyadarsini Hills P.O, Kottayam, Kerala, India
  • K. Shreekrishna Kumar  School of Technology and Applied Sciences, Mahatma Gandhi University, Pullarikunnu Campus, Malloosserry. P.O, Kottayam, Kerala, India

Keywords:

α-4T; Thermal Evaporation; Annealing, Optical Energy Gap; Urbach Energy

Abstract

α-4T thin films of various thicknesses are prepared by thermal evaporation method. The absorption spectra of the as-deposited and annealed films are recorded using UV-Vis-NIR spectrophotometer. The dependence of absorption coefficient on photon energy has been studied.  Optical band gap and urbach energy of as deposited and annealed thin films of various thicknesses have been estimated. α-4T thin film is found to have direct energy gap. It is observed that the optical energy gap slightly decreases and urbach energy increases with increase in film thickness.

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International Journal of Scientific Research in Science and Technology

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Published

2017-10-31

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Volume 3, Issue 7, September-October-2017

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Research Articles

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[1]
V. Sasidharan, C.S. Menon, K. Shreekrishna Kumar "Estimation of Band Gap Energy and Urbach Energy of  α-quaterthiophene ( α-4T) thin Films and their Effect on Film Thickness" International Journal of Scientific Research in Science and Technology(IJSRST), Online ISSN : 2395-602X, Print ISSN : 2395-6011,Volume 3, Issue 7, pp.535-539, September-October-2017.