Theoretical Study of Semiconductor Research and Its Devices

Authors

  • Ragini  Research Scholar, University Department of Electronics, B.R.A. Bihar University, Muzaffarpur, Bihar, India

Keywords:

Abstract

The physics of semiconductor and its devices is naturally dependent on the physics of semiconductor materials themselves. This chapter presents a summary and review of the basic physics and properties of semiconductors, As it appears from most of the historical reviews of semiconductor research, semiconductor devices

References

  1. G.L Pearson and W.H Brattain, history of semiconductor research”, proc.IRE, vol.43, pp1974-1806, Dec.1955.
  2. Faraday, M., Experimental Researches in Electricity, Bern and Quaritch, London (1839)., Vol.I.pp.122-124.
  3. Becquerel,A.E.,”on Electric Effects under the influence of solar Radiation”, comtes Rendus de I’Academie des sciences,vol.9(November 21, 1839),pp.31-33.
  4. Smith, W., “TheAction of light on selenium”,j. of the soc.telegraph engineers ,vol.2,no.1(1873),pp.711-714.
  5.  Smith W.,”Curious effect of light on selenium”,scientific American,29 March 1873.
  6. Fritts , C.e., “A New Form of seleninum
  7. Araujo, Paulo T., Mauricio Terrones, and Mildred S. Dresselhaus. 2012. “Defects and Impurities in Graphene-like Materials.” Materials Today 15(3):98–109.
  8. Tapia, a., R. Peón-Escalante, C. Villanueva, and F. Avilés. 2012. “Influence of Vacancies
  9. On the Elastic Properties of a Graphene Sheet.” Computational Materials Science 55:255–62.
  10. Pei, Q. X., Zhang, Y. W., & Shenoy, V. B. (2010). A molecular dynamics study of the Mechanical properties of hydrogen functionalized grapheme. Carbon, 48(3), 898-904.
  11. Memarian, F., Fereidoon, a., & Darvish Ganji, M. (2015). Grapheme Young’s modulus: Molecular mechanics and DFT treatments. Super lattices and Microstructures, 85, 348–356.

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Published

2018-11-30

Issue

Section

Research Articles

How to Cite

[1]
Ragini, " Theoretical Study of Semiconductor Research and Its Devices, International Journal of Scientific Research in Science and Technology(IJSRST), Online ISSN : 2395-602X, Print ISSN : 2395-6011, Volume 4, Issue 11, pp.539-542, November-December-2018.