Synthesis of PbS Thin Film by Dip Coating Technique for Sensitization of Large band gap Semiconductor

Authors

  • J K Dongre  Department of Physics, Government Autonomous Post Graduate College Chhindwara, Madhya Pradesh, India

DOI:

https://doi.org/10.32628/IJSRST218248

Keywords:

PbS, dip coating technique, atomic force microscopy, UV-vis spectroscopy, photoelectrochemical cell

Abstract

Thin film of Lead sulfide (PbS) is synthesized via low cost dip coating technique using precursors Pb(NO3)2 and thiourea for lead ions Pb+2 and sulfide ions S-2 respectively. The film is synthesized in alkaline medium. The as grown films onto glass slides were characterized by atomic force microscopy and UV-vis spectroscopy. The AFM image shows agglomeration of particles. The band gap value estimated from the UV-vis spectra as 1.49 eV. The photoelectrochemical (PEC) performance of cell was estimated in two electrode configuration. The thin film of PbS in PEC cell exhibited efficiency of 0.09% with fill-factor of 41% in polysulfide solution.

References

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International Journal of Scientific Research in Science and Technology

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Published

2021-03-30

Issue

Volume 8, Issue 2, March-April-2021

Section

Research Articles

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This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

[1]
J K Dongre "Synthesis of PbS Thin Film by Dip Coating Technique for Sensitization of Large band gap Semiconductor" International Journal of Scientific Research in Science and Technology(IJSRST), Online ISSN : 2395-602X, Print ISSN : 2395-6011,Volume 8, Issue 2, pp.312-315, March-April-2021. Available at doi : https://doi.org/10.32628/IJSRST218248