Influence of Cu Doping on Physical Properties of Nanocrystalline Spray Deposited Zinc Oxide Thin Films

Authors

  • S. G. Ibrahim  Department of Engineering Physics, Prof. Ram Meghe College of Engineering and Management, Badnera, Maharashtra, India
  • A. V. Kadu  Department of Engineering Chemistry, Prof. Ram Meghe College of Engineering and Management, Badnera, Maharashtra, India
  • P. H. Salame  Department of Physics, Institute of Chemical Technology, Mumbai, India
  • S. A. Waghuley  Department of Physics, Sant Gadge Baba Amravati University, Amravati, Maharashtra, India

DOI:

https://doi.org//10.32628/IJSRST2184107

Keywords:

Thin films, Nanostructures, Structural properties, Optical properties, Electrical properties.

Abstract

Nanotechnology is critical in today's world of technology and research. Structures are becoming more miniature in every field, which reduces circuit size and cost while also increasing working efficiencies. In the present research work, the influence of Cu doping on physical properties of nanocrystalline spray deposited zinc oxide thin films were studied. The structural and morphological investigations revealed that, the films are nanocrystalline in nature with pure hexagonal lattice and mixed cubic lattices and exhibits direct band gap of the order of 3.32 eV which decreases to 2.52 eV with increase in doping concentration. The electrical resistivity of the pristine films was found to be 3.81×10-1Ωcm which decrease to 4.80×10-2Ωcm with higher Cu doping. The thermo-emf measurement confirms that both undoped and doped thin films own n-type conductivity.

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International Journal of Scientific Research in Science and Technology

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Published

2021-08-30

Issue

Volume 8, Issue 4, July-August-2021

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Research Articles

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How to Cite

[1]
S. G. Ibrahim, A. V. Kadu, P. H. Salame, S. A. Waghuley, " Influence of Cu Doping on Physical Properties of Nanocrystalline Spray Deposited Zinc Oxide Thin Films , International Journal of Scientific Research in Science and Technology(IJSRST), Online ISSN : 2395-602X, Print ISSN : 2395-6011, Volume 8, Issue 4, pp.662-667, July-August-2021. Available at doi : https://doi.org/10.32628/IJSRST2184107