Study of Scattering Cross Section and Scattering Mechanism for Mobility In Covalent Semiconductor

Abstract

In this paper, we present about the study of scattering cross section and scattering mechanism for mobility in covalent semiconductor (Si & Ge). Scattering in Silicon-Germanium With low power dissipation, high integration levels, good noise immunity, high cost-effectiveness and reliability, silicon CMOS Complementary Metal-Oxide-Semiconductor, technology occupies a dominant position in microelectronics. However, the low mobilities which is a figure of merit for semiconductor materials of electrons and holes in silicon limits its application to relatively low frequencies, leaving III-V materials such as Gallium Arsenide (and related materials) to fulfil roles in mobile communications and the like. Strained layers of silicon and silicon-germanium alloy offer scope for dramatic improvements in mobility, and therefore performance. New technology may possibly be incorporated into standard silicon CMOS processing, making the transition favourable to industry. Room temperature mobilities in silicon MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistor) tend to be around 300cm2 V-1 s-1for electrons, and less than 100cm2 V-1 s-1 for holes, for sheet densities of the order of 1013 cm-2.