Study of MOSFET and Bipolar Junction Transistor with Floating Admittance Matrix
Keywords:
MOSFET, Bipolar Junction Transistor, Floating Admittance Matrix, Input and OutputAbstract
This paper has been devoted to the study of MOSFET and Bipolar Junction Transistor (BJT) with Floating Admittance Matrix (FAM). In this paper we have studied development of Floating Admittance Matrix (FAM) for MOSFET and Bipolar Junction Transistor (BJT). We have represented as four terminals or two port network if any one of the terminals of these devices is made common to both input and output sides in any of its configuration. The mathematical modeling through FAM approaches MOSFET and BJT. Also we have derived the equations for the input resistance, output resistance, current gain, voltage gain of any circuit which shows that one can analyze and design the circuits using first and second order cofactors of the floating admittance matrix (FAM) of the concerned circuit. The entire properties of that circuit can be obtained in the form of cofactors of the floating admittance matrix (FAM).
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