Efficient PMOS-Biased Sense Amplifier Design Using Lector Biasing Technique for Low Power Applications

Abstract

The sensing amplifier is a key component in the circuits of a semiconductor memory chip. Its functioning has a significant impact on the reliability, operational efficacy, and efficiency of core memory designs. This analysis delves into the examination of two distinct circuit configurations. The first circuit design introduces a novel sensing amplifier that employs a PMOS biasing approach. This innovative implementation yields output outcomes equivalent to those previously established in prior research. However, a remarkable enhancement in both reduced sensing delay and diminished power dissipation is observed. This advancement is attributed to the utilization of a novel lector approach within the power gating strategies. Notably, this technique results in a lower output impedance. In summary, the simulation outcomes of the proposed sensing amplifier align harmoniously with the functions traditionally achieved by established circuits. A noteworthy distinction, however, lies in the consumption of energy. The utilization of the suggested sensing amplifier design demands notably less energy, without compromising on functionality. The comprehensive evaluation was conducted using Tanner EDA software and was executed utilizing the 180nm technology file. Through rigorous simulation and meticulous analysis, the overall performance of the newly introduced sensing amplifiers was ascertained and interpreted. The outcomes of this study contribute to the ongoing advancement and optimization of semiconductor memory chip circuitry.